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Semiconductors Diodes Standard and Rectifier Diodes

BAS85-GS08

BAS85-GS08
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.0866$ 0.0866$
10 - 24 0.0823$ 0.0823$
25 - 49 0.0780$ 0.0780$
50 - 99 0.0736$ 0.0736$
100 - 249 0.0693$ 0.0693$
250 - 499 0.0650$ 0.0650$
500 - 15516 0.0607$ 0.0607$
Quantity U.P
1 - 9 0.0866$ 0.0866$
10 - 24 0.0823$ 0.0823$
25 - 49 0.0780$ 0.0780$
50 - 99 0.0736$ 0.0736$
100 - 249 0.0693$ 0.0693$
250 - 499 0.0650$ 0.0650$
500 - 15516 0.0607$ 0.0607$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 15516
Set of 1

BAS85-GS08. RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering (SMD). Housing: SOD80. Housing (JEDEC standard): Sb. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 0.6A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 0.2uA..2uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA. Quantity in stock updated on 18/04/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 1678
BAS85

BAS85

Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80...
BAS85
Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
BAS85
Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
Set of 10
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$

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BAS85-GS08

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RSF1WS-0R15

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