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Semiconductors Diodes Standard and Rectifier Diodes

BAS85-GS08

BAS85-GS08
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Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.43$ 0.43$
3 - 4 0.41$ 0.41$
5 - 9 0.39$ 0.39$
10 - 19 0.37$ 0.37$
20 - 49 0.35$ 0.35$
50 - 99 0.32$ 0.32$
100 - 4347 0.30$ 0.30$
Quantity (Set of 5) U.P
1 - 2 0.43$ 0.43$
3 - 4 0.41$ 0.41$
5 - 9 0.39$ 0.39$
10 - 19 0.37$ 0.37$
20 - 49 0.35$ 0.35$
50 - 99 0.32$ 0.32$
100 - 4347 0.30$ 0.30$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 21732
Set of 5

BAS85-GS08. RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering (SMD). Housing: SOD80. Housing (JEDEC standard): Sb. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 0.6A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 0.2uA..2uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA. Quantity in stock updated on 24/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 1718
BAS85

BAS85

Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. F...
BAS85
Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. Forward current (AV): 0.2A. IFSM: 4A. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
BAS85
Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. Forward current (AV): 0.2A. IFSM: 4A. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
Set of 10
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$

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