BAS316

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 4	0.26$	0.26$
5 - 9	0.24$	0.24$
10 - 24	0.23$	0.23$
25 - 49	0.23$	0.23$
50 - 99	0.22$	0.22$
100 - 149	0.21$	0.21$
150 - 955	0.20$	0.20$

Quantity (Set of 10)	U.P
1 - 4	0.26$	0.26$
5 - 9	0.24$	0.24$
10 - 24	0.23$	0.23$
25 - 49	0.23$	0.23$
50 - 99	0.22$	0.22$
100 - 149	0.21$	0.21$
150 - 955	0.20$	0.20$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 9543

Set of 10

BAS316. Forward current (AV): 0.5A. IFSM: 1A. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 85V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diode. Production date: 2014/22. Marking on the case: A6. Number of terminals: 2. RoHS: yes. Spec info: IFSM--4A(t=1us), 1A(t=1ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. Original product from manufacturer Nxp Semiconductors. Quantity in stock updated on 04/06/2025, 03:25.

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Delivery in 2-3 days, with postal tracking!