Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.69$ | 0.69$ |
5 - 9 | 0.66$ | 0.66$ |
10 - 24 | 0.62$ | 0.62$ |
25 - 49 | 0.59$ | 0.59$ |
50 - 55 | 0.55$ | 0.55$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.69$ | 0.69$ |
5 - 9 | 0.66$ | 0.66$ |
10 - 24 | 0.62$ | 0.62$ |
25 - 49 | 0.59$ | 0.59$ |
50 - 55 | 0.55$ | 0.55$ |
BAS316. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diode. Production date: 2014/22. Forward current (AV): 0.5A. IFSM: 1A. Marking on the case: A6. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 85V. Spec info: IFSM--4A(t=1us), 1A(t=1ms). Quantity in stock updated on 08/04/2025, 09:25.
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