Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.84$ | 0.84$ |
5 - 9 | 0.80$ | 0.80$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.72$ | 0.72$ |
50 - 99 | 0.70$ | 0.70$ |
100 - 180 | 0.61$ | 0.61$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.84$ | 0.84$ |
5 - 9 | 0.80$ | 0.80$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.72$ | 0.72$ |
50 - 99 | 0.70$ | 0.70$ |
100 - 180 | 0.61$ | 0.61$ |
80SQ05. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. MRI (max): 20mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.4x7.5mm). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V. VRRM: 50V. Number of terminals: 2. IFSM: 155A / 50Hz, 180A / 60Hz. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: i2t--132Ap t<10us, TA=25°C. Quantity in stock updated on 24/12/2024, 18:25.
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