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Semiconductors Diodes Standard and Rectifier Diodes

BAS16LT-1

BAS16LT-1
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.61$ 0.61$
5 - 9 0.58$ 0.58$
10 - 24 0.55$ 0.55$
25 - 49 0.54$ 0.54$
50 - 99 0.52$ 0.52$
100 - 149 0.49$ 0.49$
150 - 250 0.47$ 0.47$
Quantity (Set of 10) U.P
1 - 4 0.61$ 0.61$
5 - 9 0.58$ 0.58$
10 - 24 0.55$ 0.55$
25 - 49 0.54$ 0.54$
50 - 99 0.52$ 0.52$
100 - 149 0.49$ 0.49$
150 - 250 0.47$ 0.47$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2496
Set of 10

BAS16LT-1. Forward current (AV): 200mA. IFSM: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). VRRM: 75V. Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semiconductor material: silicon. Function: switching diode. Note: screen printing/SMD code A6s, A6t. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 20/05/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 32054
BAS16

BAS16

Forward current (AV): 215mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet)...
BAS16
Forward current (AV): 215mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 100V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed switching diode. MRI (max): 0.5uA. MRI (min): 30nA. Marking on the case: A6W. Number of terminals: 3. RoHS: yes. Spec info: IFSM--1A (T=1ms), 4A (T=1us). Assembly/installation: surface-mounted component (SMD). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV
BAS16
Forward current (AV): 215mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 100V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed switching diode. MRI (max): 0.5uA. MRI (min): 30nA. Marking on the case: A6W. Number of terminals: 3. RoHS: yes. Spec info: IFSM--1A (T=1ms), 4A (T=1us). Assembly/installation: surface-mounted component (SMD). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV
Set of 25
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$

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MMBT3906LT1G

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TL062CD

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