Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.41$ | 0.41$ |
5 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 149 | 0.31$ | 0.31$ |
150 - 1797 | 0.29$ | 0.29$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.41$ | 0.41$ |
5 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 149 | 0.31$ | 0.31$ |
150 - 1797 | 0.29$ | 0.29$ |
BAS21. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Voltage Switching Diode. Forward current (AV): 200mA. IFSM: 625mA. Note: screen printing/SMD code JS. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A. Quantity in stock updated on 24/12/2024, 02:25.
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