Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.41$ | 0.41$ |
100 - 196 | 0.35$ | 0.35$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.41$ | 0.41$ |
100 - 196 | 0.35$ | 0.35$ |
6A100G-R0G. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Equivalents: 6A100G-R0G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--250Ap (t=8.3ms). Quantity in stock updated on 24/12/2024, 16:25.
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