Standard and Rectifier Diodes

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 15A. IFSM: 60.4k Ohms. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: Ifsm 120Ap t=10mS

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 30A. IFSM: 300A. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: IFSM--300Ap

RoHS: yes. Housing: TO-247. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 22 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 60A. IFSM: 330A. Number of terminals: 3. Temperature: +175°C. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Operating temperature: +175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.75V. VRRM: 200V. Spec info: Ifsm--330Ap t=10mS

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Marking on the case: STTH802. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Function: ultra-fast rectifier diodes (min 17ns, max 30ns). Conditioning unit: 50. Spec info: Ifsm 100Ap

Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap

Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap

Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap

Semiconductor material: Sb. Forward current (AV): 0.15A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80. VRRM: 100V. Number of terminals: 2. Note: IFSM 0.75App/10ms

RoHS: yes. Housing: SMD 0805. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Forward current (AV): 150mA. IFSM: 500mA. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 100V. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.47V. Forward voltage Vf (min): 0.33V. VRRM: 45V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U60. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.58V. Forward voltage Vf (min): 0.39V. VRRM: 60V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)

Semiconductor material: silicon. Forward current (AV): 0.6A. VRRM: 600V

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 100V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 400V. Number of terminals: 2. Note: GI-S

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Forward current (AV): 3A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 600V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 3A. IFSM: 150A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.2x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifms 150Ap t=8.3ms

Cj: 35pF. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 2A. IFSM: 80A. MRI (max): 200uA. MRI (min): 5uA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). Tr: 15 ns. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Spec info: IFSM--80A/8.3ms

Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMA (4.6x2.8 mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--30Ap

Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 12A. IFSM: 265A. MRI (max): 12mA. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.77V. VRRM: 1200V. Quantity per case: 1. Number of terminals: 1. Note: M5 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Cj: 50pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 60A. IFSM: 600A. MRI (max): 2mA. MRI (min): 50uA. Equivalents: 60APU04PBF, VS-60APU04PBF. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V. Spec info: pinout 60EPUxx 1