Standard and Rectifier Diodes

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Forward current (AV): 3A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 600V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Number of terminals: 2. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 3A. IFSM: 150A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.2x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifms 150Ap t=8.3ms

Cj: 35pF. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 2A. IFSM: 80A. MRI (max): 200uA. MRI (min): 5uA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). Tr: 15 ns. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Spec info: IFSM--80A/8.3ms

Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMA (4.6x2.8 mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--30Ap

Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 12A. IFSM: 265A. MRI (max): 12mA. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.77V. VRRM: 1200V. Quantity per case: 1. Number of terminals: 1. Note: M5 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Cj: 50pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 60A. IFSM: 600A. MRI (max): 2mA. MRI (min): 50uA. Equivalents: 60APU04PBF, VS-60APU04PBF. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V. Spec info: pinout 60EPUxx 1

Function: Schottky rectifier diode. Forward current (AV): 8A. IFSM: 850A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220-2 (TO-220AC). Operating temperature: -55...+175°C. Forward voltage Vf (min): 0.72V. VRRM: 100V

Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual power Schottky diode. Forward current (AV): 20A. IFSM: 165A. MRI (max): 30mA. MRI (min): 50uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.71V. Forward voltage Vf (min): 0.48V. VRRM: 100V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--330A (t=10ms), 363A (t=8.3ms) / diode

Semiconductor material: silicon. Forward current (AV): 5A. VRRM: 200V. Note: plastic. Note: 0402-000491. Note: 50Ap / 10ms