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Semiconductors Diodes Standard and Rectifier Diodes

893-399016AB

893-399016AB
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.58$ 0.58$
10 - 13 0.55$ 0.55$
Quantity U.P
1 - 9 0.58$ 0.58$
10 - 13 0.55$ 0.55$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

893-399016AB. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AP. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V. Spec info: IFMS 50Ap. Quantity in stock updated on 05/04/2025, 04:25.

Equivalent products :

Quantity in stock : 28
RGP20D

RGP20D

Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. ...
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$

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1N5378B

1N5378B

Semiconductor material: silicon. Number of terminals: 2. Pd (Power Dissipation, Max): 5W. Assembly/i...
1N5378B
[LONGDESCRIPTION]
1N5378B
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Quantity in stock : 45
BYW95C

BYW95C

Cj: 85pF. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery c...
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Quantity in stock : 113
KBPC610

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Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon...
KBPC610
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TIP122

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Quantity in stock : 5272
RGP02-20E

RGP02-20E

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semico...
RGP02-20E
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Quantity in stock : 55
B600C3000W

B600C3000W

Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current...
B600C3000W
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0.72$ VAT incl.
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Quantity in stock : 35
KBPC606

KBPC606

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. For...
KBPC606
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Quantity in stock : 89
KBPC1008

KBPC1008

Cj: 21pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier b...
KBPC1008
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Quantity in stock : 71
KBPC1006

KBPC1006

Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
KBPC1006
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Quantity in stock : 16
2SD1062

2SD1062

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 280. Minimum hFE ga...
2SD1062
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