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893-399016AB. Forward current (AV): 2A. IFSM: 50A. Housing: DO-204. Housing (according to data sheet): DO-204AP. VRRM: 50V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Original product from manufacturer General Semiconductor. Quantity in stock updated on 20/05/2025, 22:25.
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