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Semiconductors Diodes

1N4007

1N4007
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[TITLE]
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.28$ 0.28$
5 - 9 0.27$ 0.27$
10 - 24 0.25$ 0.25$
25 - 49 0.24$ 0.24$
50 - 99 0.23$ 0.23$
100 - 149 0.21$ 0.21$
150 - 41584 0.20$ 0.20$
Quantity (Set of 10) U.P
1 - 4 0.28$ 0.28$
5 - 9 0.27$ 0.27$
10 - 24 0.25$ 0.25$
25 - 49 0.24$ 0.24$
50 - 99 0.23$ 0.23$
100 - 149 0.21$ 0.21$
150 - 41584 0.20$ 0.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 415832
Set of 10

1N4007. VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: 30Ap/8.3ms. Quantity in stock updated on 24/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 10785
BY133

BY133

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
Set of 10
0.49$ VAT incl.
(0.49$ excl. VAT)
0.49$
Quantity in stock : 416
SUF4007

SUF4007

Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ...
SUF4007
Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
SUF4007
Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
Set of 10
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$
Quantity in stock : 1036
EM516

EM516

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon...
EM516
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2x2.7 ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1600V. Spec info: 30Ap
EM516
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2x2.7 ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1600V. Spec info: 30Ap
Set of 10
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$

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Quantity in stock : 415832
1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
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1N5394

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Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
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Quantity in stock : 47909
1N4148

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Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
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Quantity in stock : 36
MAL202190532E3

MAL202190532E3

DC voltage: 100V. Capacitance: 100uF. Diameter: 13mm. Lifespan: 2000 hours. Lenght: 21mm. Impedance:...
MAL202190532E3
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Quantity in stock : 2918
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
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Quantity in stock : 72
IRG4BC30U

IRG4BC30U

Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Collector current: 23A. Ic(pulse): 92A. ...
IRG4BC30U
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Quantity in stock : 43
EM78P156ELM

EM78P156ELM

Number of terminals: 18. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing:...
EM78P156ELM
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EM78P156ELM
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2.10$ VAT incl.
(2.10$ excl. VAT)
2.10$
Quantity in stock : 4932
GP02-40

GP02-40

Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semicondu...
GP02-40
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GP02-40
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0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$

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