Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.70$ | 0.70$ |
5 - 9 | 0.67$ | 0.67$ |
10 - 24 | 0.63$ | 0.63$ |
25 - 49 | 0.60$ | 0.60$ |
50 - 99 | 0.58$ | 0.58$ |
100 - 249 | 0.57$ | 0.57$ |
250 - 1129 | 0.51$ | 0.51$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.70$ | 0.70$ |
5 - 9 | 0.67$ | 0.67$ |
10 - 24 | 0.63$ | 0.63$ |
25 - 49 | 0.60$ | 0.60$ |
50 - 99 | 0.58$ | 0.58$ |
100 - 249 | 0.57$ | 0.57$ |
250 - 1129 | 0.51$ | 0.51$ |
B1000S1500. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Quantity in stock updated on 24/12/2024, 02:25.
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