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B1000S1500

B1000S1500
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Quantity excl. VAT VAT incl.
1 - 4 0.70$ 0.70$
5 - 9 0.67$ 0.67$
10 - 24 0.64$ 0.64$
25 - 49 0.63$ 0.63$
50 - 99 0.62$ 0.62$
100 - 249 0.60$ 0.60$
250 - 1094 0.54$ 0.54$
Quantity U.P
1 - 4 0.70$ 0.70$
5 - 9 0.67$ 0.67$
10 - 24 0.64$ 0.64$
25 - 49 0.63$ 0.63$
50 - 99 0.62$ 0.62$
100 - 249 0.60$ 0.60$
250 - 1094 0.54$ 0.54$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1094
Set of 1

B1000S1500. VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Original product from manufacturer Taiwan Semiconductor. Quantity in stock updated on 21/05/2025, 13:25.

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