NPN bipolar transistors

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-247, TO-247, 800V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P(H)IS. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 145pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Ic(pulse): 30A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 1.1V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Spec info: 4.8us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 10A, 825V. Collector current: 10A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Note: MONITOR. Pd (Power Dissipation, Max): 45W. Spec info: 7.4us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 12A, 1700V. Collector current: 12A. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. Function: Power Transistor. Note: MONITOR 16KHz. Spec info: Rbe 70 Ohms, SOT199 (TO-247F). Type of transistor: NPN

NPN transistor, 7A, TO-220, 200V. Collector current: 7A. Housing: TO-220. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 400V

NPN transistor, 12A, 375V. Collector current: 12A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 12A, 400V. Collector current: 12A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 6A, 375V. Collector current: 6A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-SN. Pd (Power Dissipation, Max): 70W. Type of transistor: NPN. Vcbo: 800V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV/Monitor. Pd (Power Dissipation, Max): 55W. Spec info: 'CTV-HA' (insulated). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 2.5A, 700V. Collector current: 2.5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA SMPS. Note: Vce(sat) 1.0V, Vbe(sat) 1.3V. Pd (Power Dissipation, Max): 100W. Spec info: TO-220AB. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS (F). Pd (Power Dissipation, Max): 20W. Spec info: TO-220F (SOT186). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 34W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, TO-3, 7A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Maximum dissipation Ptot [W]: 90W

NPN transistor, PCB soldering, TO-247, 15A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU941ZP. Collector-emitter voltage Uceo [V]: 350V. Maximum dissipation Ptot [W]: 155W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

NPN transistor, 10A, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 350V. Collector current: 10A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 350V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: fall time 625ns. Max hFE gain: 3400. Minimum hFE gain: 500. Spec info: 360-450V Clamping. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, 0.5A, D-PAK ( TO-252 ), 450V. Collector current: 0.5A. Housing: D-PAK ( TO-252 ). Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 20W. Spec info: HV-POWER. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 30A, TO-247, TO-247, 450V. Collector current: 30A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Ic(pulse): 60A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: High voltage fast-switching power transistor. Assembly/installation: PCB through-hole mounting. Technology: 'High Voltage Multi Epitaxial Planar technology'. Tf(max): 0.1us. Tf(min): 0.05us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Vebo: 7V

NPN transistor, 14A, ISOWATT218FX, TO-218-ISO, 700V. Collector current: 14A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-ISO. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 14. Minimum hFE gain: 7. Ic(pulse): 18A. Note: hi-res, monitor 19. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: Icmax--18A <5mS. Assembly/installation: PCB through-hole mounting. Tf(max): 220 ns. Tf(min): 110 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 16A, TO-3P ( TO-218 SOT-93 ), TO-218 ( SOT93 ), 700V. Collector current: 16A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218 ( SOT93 ). Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Voltage Fast Switching Transistor. Max hFE gain: 14. Minimum hFE gain: 5. Ic(pulse): 22A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. Spec info: Icm.22A <5ms. Assembly/installation: PCB through-hole mounting. Tf(max): 210 ns. Tf(min): 110 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 5A, TO-220, TO-220, 500V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Fast switching for switching power supplies. Max hFE gain: 14. Minimum hFE gain: 6. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Tf(max): 150us. Tf(min): 80us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V