NPN bipolar transistors

NPN transistor, 5A, TO-220FP, TO-220F, 500V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 500V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: High-speed switching. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.1V. Vebo: 9V

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUL45D2G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 5A, TO-220, TO220AB CASE 221A-09, 400V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 50pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Max hFE gain: 34. Minimum hFE gain: 22. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: Built-in Efficient Antisaturation Network. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.28V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 12V

NPN transistor, 4A, 500V. Collector current: 4A. Collector/emitter voltage Vceo: 500V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Pd (Power Dissipation, Max): 65W. Spec info: High-Speed. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 1.2A, TO-126F, TO-126F, 400V. Collector current: 1.2A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 5. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 600V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 10A, TO-220FP, TO-220F, 450V. Collector current: 10A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 23W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 4A, 350V. Collector current: 4A. Collector/emitter voltage Vceo: 350V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Pd (Power Dissipation, Max): 55W. Type of transistor: NPN. Vcbo: 600V

NPN transistor, PCB soldering, TO-247, 15A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUV48A. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 5A, TO-3PN, 450V. Collector current: 5A. Housing: TO-3PN. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage, fast-switching. Max hFE gain: 35. Minimum hFE gain: 10. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 10A, TO-247, TO-247, 450V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 50. Minimum hFE gain: 15. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, PCB soldering, TO-3, 15A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX48A. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 175W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 2A, TO-220, TO-220, 450V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Max hFE gain: 50. Minimum hFE gain: 30. Ic(pulse): 3A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, PCB soldering, TO-126, 500mA. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): SOT-82. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX87P. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: TO126, SOT32. Frequency: 90MHz. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 3A. Power: 12.5W

NPN transistor, 50mA, SOT-23 ( TO-236 ), SC-59, 50V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59. Collector/emitter voltage Vceo: 50V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 10k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: DTR.. Ic(pulse): 100mA. Marking on the case: 24. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Spec info: screen printing/SMD code 24. Assembly/installation: surface-mounted component (SMD). Power: 0.2W. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 200. Note: screen printing/SMD code 33. Marking on the case: *33, P33, t33, w33. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: R1 typ=4.7k Ohms, R2 typ=NC (open). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN transistor, 100A, ISOPLUS247 ( TO-247 ), ISOTOP ( SOT-227 ), 400V. Collector current: 100A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Collector/emitter voltage Vceo: 400V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Power Darlington NPN Transistor Module. Max hFE gain: 300. Minimum hFE gain: 300. Ic(pulse): 150A. Note: Screwed. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 225W. RoHS: yes. Spec info: Single Dual Emitter. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.35us. Type of transistor: NPN & NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1.25V. Vebo: 7V

NPN transistor, 20A, TO-264 ( TOP-3L ), TO-264, 800V. Collector current: 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 60. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: J13007. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, PCB soldering (SMD), SOT-223, 0.3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 0.3A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT458. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 24A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 800V. Collector current: 24A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA hi-res (F). Ic(pulse): 36A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: 0.17...0.31us. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 180 ns. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 0.95V. Maximum saturation voltage VCE(sat): 3V. Vebo: 10V

NPN transistor, 0.7A, 140V. Collector current: 0.7A. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 2.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Vcbo: 160V