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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V - BU2527DX

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V - BU2527DX
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.59$ 2.59$
5 - 9 2.46$ 2.46$
10 - 18 2.38$ 2.38$
Quantity U.P
1 - 4 2.59$ 2.59$
5 - 9 2.46$ 2.46$
10 - 18 2.38$ 2.38$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V - BU2527DX. NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 08/06/2025, 12:25.

Equivalent products :

Quantity in stock : 7
2SC5696

2SC5696

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3...
2SC5696
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. BE resistor: yes. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Vebo: 5V
2SC5696
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. BE resistor: yes. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
5.47$ VAT incl.
(5.47$ excl. VAT)
5.47$

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