NPN bipolar transistors

NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C1507 O. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) KSA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 10. BE diode: no. BE resistor: 10. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 1W. Spec info: TO-92M (hauteur 9mm). Type of transistor: NPN

NPN transistor, 0.7A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 60V. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92L ( SC-51 ) ( 9mm ). Collector/emitter voltage Vceo: 60V. Cost): 60pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V

NPN transistor, 3A, TO-220, TO-220, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 60pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V

NPN transistor, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 60pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.5us. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 7V

NPN transistor, 7A, TO-3PF (SOT399), TO-3PF, 800V. Collector current: 7A. Housing: TO-3PF (SOT399). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. BE diode: no. BE resistor: 10. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Switching 0.1us. Max hFE gain: 22. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: VEBO 6V. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 4.2V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Pd (Power Dissipation, Max): 60W. Spec info: Monitor 68KHz. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 150mA, TO-92, TO-92, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Pinout: 1. C(in): 1.5pF. Cost): 11pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: complementary transistor (pair) KSA733. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V

NPN transistor, 150mA, TO-92, TO-92, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Pinout: 1. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: complementary transistor (pair) KSA733. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V

NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) KSB1366. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN transistor, 12A, TO-220FP, TO-220F, 400V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Voltage Switch Mode'. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 600mA, TO-92, TO-92, 40V. Collector current: 600mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

ROHS: Yes. Housing: TO92. Frequency: 250MHz. Power: 500mW. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 75V. Collector current Ic [A]: 800mA, 0.8A

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1002. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 22k Ohms. BE diode: no. BE resistor: 22k Ohms. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Vebo: 10V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. BE diode: no. Cost): 0.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 12A, ISOWATT218FX, TO-218-FX, 700V. Collector current: 12A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Collector/emitter voltage Vceo: 700V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Ic(pulse): 18A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Spec info: ICM--16A (tp=5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Vebo: 7V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 400V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. Spec info: complementary transistor (pair) MJ11033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN transistor, TO-3 ( TO-204 ), TO-3, 140V, 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. Collector current: 20A. RoHS: yes. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15004. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Max hFE gain: 150. Minimum hFE gain: 25