NPN bipolar transistors

NPN transistor, 8A, 600V. Collector current: 8A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1400V

NPN transistor, 8A, 600V. Collector current: 8A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, M31/J, 12A. Housing: PCB soldering. Housing: M31/J. Collector current Ic [A], max.: 12A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V. Maximum dissipation Ptot [W]: 130W

NPN transistor, 15A, 800V. Collector current: 15A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: HA hi-def.. Pd (Power Dissipation, Max): 180W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.2A, TO-92, TO-92, 400V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: High-Voltage Driver Applications. Pd (Power Dissipation, Max): 0.6W. Spec info: hFE 100...200. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, TO-247, TO-247, 450V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 130W. Spec info: 500/2200ns. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 600V

NPN transistor, 0.065A, 10V. Collector current: 0.065A. Collector/emitter voltage Vceo: 10V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: UHF. Spec info: 9000MHZ. Power: 200mW. Type of transistor: NPN. Vcbo: 20V. Vebo: 1.5V

NPN transistor, 7A, TO-220, TO-220AB, 400V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Switching Regulator Applications. Pd (Power Dissipation, Max): 50W. Spec info: 2SD4106M. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V

NPN transistor, 10A, TO-220, TO-220AB, 400V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Fast Switching Speed. Max hFE gain: 50. Minimum hFE gain: 15. Ic(pulse): 20A. Marking on the case: C4107. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 0.8V

NPN transistor, 7A, TO-220FP, TO-220F, 120V. Collector current: 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: DC/DC voltage converter. Max hFE gain: 220. Minimum hFE gain: 70. Ic(pulse): 14A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: COB--110pF (VCB=10V, f=1MHzC). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.5V

NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: hFE1 1500, hFE2 600 . Pd (Power Dissipation, Max): 0.6W. Spec info: Lo-Sat Vce(sat)<0.5V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SMV-5, 0.15A. Housing: PCB soldering (SMD). Housing: SMV-5. Collector current Ic [A], max.: 0.15A. RoHS: yes. Component family: dual NPN bipolar transistor. Configuration: surface-mounted component (SMD). Number of terminals: 5. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 80 MHz. Maximum dissipation Ptot [W]: 0.3W

NPN transistor, 3A, 800V. Collector current: 3A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1200V. Vebo: 7V

NPN transistor, 3A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 3A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: Switching Power Transistor. Pd (Power Dissipation, Max): 80W. Spec info: HFX series. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1200V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1200V

NPN transistor, 10A, TO-247, TO-247, 150V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SA1633. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.3A, 30 v. Collector current: 0.3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Function: VHF Wide band amplifier. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, 2A, TO-220FP, FM20 (TO220F), 200V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): FM20 (TO220F). Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 35pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High voltage NPN transistor for audio and general purpose applications.. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1668. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 200V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, 8A, 120V. Collector current: 8A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 75W. Spec info: complementary transistor (pair) 2SA1671. Type of transistor: NPN. Vcbo: 160V

NPN transistor, 10A, 140V. Collector current: 10A. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SA1672. Type of transistor: NPN. Vcbo: 180V

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 85W. Spec info: complementary transistor (pair) 2SA1673. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: SMPS. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SA1695. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SA1695. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 3A, TO-220FP, FM20 (TO220F), 50V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): FM20 (TO220F). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High hFE, LOW Vce(sat). Pd (Power Dissipation, Max): 25W. Technology: NPN Triple Diffused Planar Transistor. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V