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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 10A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A) - 2SC5129

NPN transistor, 10A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A) - 2SC5129
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Quantity excl. VAT VAT incl.
1 - 4 2.65$ 2.65$
5 - 9 2.52$ 2.52$
10 - 24 2.38$ 2.38$
25 - 49 2.25$ 2.25$
50 - 99 2.20$ 2.20$
100 - 106 2.15$ 2.15$
Quantity U.P
1 - 4 2.65$ 2.65$
5 - 9 2.52$ 2.52$
10 - 24 2.38$ 2.38$
25 - 49 2.25$ 2.25$
50 - 99 2.20$ 2.20$
100 - 106 2.15$ 2.15$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 106
Set of 1

NPN transistor, 10A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A) - 2SC5129. NPN transistor, 10A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: fall time 0.15..03us (64kHz). CE diode: yes. Quantity in stock updated on 19/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
2SC5129-PMC

2SC5129-PMC

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity pe...
2SC5129-PMC
NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Function: HA, Hi-res. CE diode: yes
2SC5129-PMC
NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Function: HA, Hi-res. CE diode: yes
Set of 1
2.34$ VAT incl.
(2.34$ excl. VAT)
2.34$
Quantity in stock : 44
KSD5703

KSD5703

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (accord...
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$

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