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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200
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Quantity excl. VAT VAT incl.
1 - 1 7.86$ 7.86$
2 - 2 7.47$ 7.47$
3 - 4 7.08$ 7.08$
5 - 9 6.68$ 6.68$
10 - 19 6.53$ 6.53$
20 - 29 6.37$ 6.37$
30 - 207 6.13$ 6.13$
Quantity U.P
1 - 1 7.86$ 7.86$
2 - 2 7.47$ 7.47$
3 - 4 7.08$ 7.08$
5 - 9 6.68$ 6.68$
10 - 19 6.53$ 6.53$
20 - 29 6.37$ 6.37$
30 - 207 6.13$ 6.13$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 207
Set of 1

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200. NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 09/05/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 142
MJL21194

MJL21194

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( T...
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$
Quantity in stock : 1
FJL4315-O

FJL4315-O

NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-...
FJL4315-O
NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) FJL4215-O. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
FJL4315-O
NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) FJL4215-O. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
6.33$ VAT incl.
(6.33$ excl. VAT)
6.33$
Quantity in stock : 21
2SC5242

2SC5242

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ...
2SC5242
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1962. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V
2SC5242
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1962. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V
Set of 1
2.72$ VAT incl.
(2.72$ excl. VAT)
2.72$

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2SA1962

2SA1962

NPN-Transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 230V. Collector current: 15A. Housing: TO-3PN ( 2-1...
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2SB1659

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NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (ac...
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Quantity in stock : 16
2SC1845

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2SC4793

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NPN transistor, 1A, TO-220FP, 2-10R1A, 230V. Collector current: 1A. Housing: TO-220FP. Housing (acco...
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2SC2240GR

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NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (accordin...
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2SC3423

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NPN transistor, 0.05A, TO-126F, TO-126F, 150V. Collector current: 0.05A. Housing: TO-126F. Housing (...
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