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N-channel FETs and MOSFETs (page 35) - RPtronics
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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1186 products available
Products per page :
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Quantity in stock : 15
IXFK48N50

IXFK48N50

N-channel transistor, TO-264 ( TOP-3L ), TO-264AA, 500V, 48A, 2mA, 0.10 Ohms. Housing: TO-264 ( TOP-...
IXFK48N50
N-channel transistor, TO-264 ( TOP-3L ), TO-264AA, 500V, 48A, 2mA, 0.10 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. ID (T=25°C): 48A. Idss (max): 2mA. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 8400pF. Cost): 900pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: F-Class--MHz Switching. G-S Protection: no. Id(imp): 192A. IDss (min): 400uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W
IXFK48N50
N-channel transistor, TO-264 ( TOP-3L ), TO-264AA, 500V, 48A, 2mA, 0.10 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. ID (T=25°C): 48A. Idss (max): 2mA. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 8400pF. Cost): 900pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: F-Class--MHz Switching. G-S Protection: no. Id(imp): 192A. IDss (min): 400uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W
Set of 1
31.77$ VAT incl.
(31.77$ excl. VAT)
31.77$
Quantity in stock : 1
IXFK48N60P

IXFK48N60P

N-channel transistor, PCB soldering, TO-264AA, 600V, 48A. Housing: PCB soldering. Housing: TO-264AA....
IXFK48N60P
N-channel transistor, PCB soldering, TO-264AA, 600V, 48A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 48A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 8860pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IXFK48N60P
N-channel transistor, PCB soldering, TO-264AA, 600V, 48A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 48A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 8860pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
29.91$ VAT incl.
(29.91$ excl. VAT)
29.91$
Quantity in stock : 19
IXFK64N50P

IXFK64N50P

N-channel transistor, PCB soldering, TO-264AA, 500V, 64A. Housing: PCB soldering. Housing: TO-264AA....
IXFK64N50P
N-channel transistor, PCB soldering, TO-264AA, 500V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N50P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 9700pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IXFK64N50P
N-channel transistor, PCB soldering, TO-264AA, 500V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N50P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 9700pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
44.60$ VAT incl.
(44.60$ excl. VAT)
44.60$
Quantity in stock : 25
IXFK64N60P

IXFK64N60P

N-channel transistor, PCB soldering, TO-264AA, 600V, 64A. Housing: PCB soldering. Housing: TO-264AA....
IXFK64N60P
N-channel transistor, PCB soldering, TO-264AA, 600V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.096 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 12000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IXFK64N60P
N-channel transistor, PCB soldering, TO-264AA, 600V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.096 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 12000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
34.90$ VAT incl.
(34.90$ excl. VAT)
34.90$
Quantity in stock : 5
IXFN520N075T2

IXFN520N075T2

N-channel transistor, SOT-227B (ISOTOP), 75V, 480A. Housing: SOT-227B (ISOTOP). Drain-source voltage...
IXFN520N075T2
N-channel transistor, SOT-227B (ISOTOP), 75V, 480A. Housing: SOT-227B (ISOTOP). Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 480A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: GigaMOS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0019 Ohms @ 480A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 48 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 41000pF. Maximum dissipation Ptot [W]: 940W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IXFN520N075T2
N-channel transistor, SOT-227B (ISOTOP), 75V, 480A. Housing: SOT-227B (ISOTOP). Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 480A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: GigaMOS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0019 Ohms @ 480A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 48 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 41000pF. Maximum dissipation Ptot [W]: 940W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
104.96$ VAT incl.
(104.96$ excl. VAT)
104.96$
Quantity in stock : 9
IXFR120N20P

IXFR120N20P

N-channel transistor, 105A, 2uA, 17m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 200V. ID (T...
IXFR120N20P
N-channel transistor, 105A, 2uA, 17m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 200V. ID (T=25°C): 105A. Idss (max): 2uA. On-resistance Rds On: 17m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 200V. C(in): 9100pF. Cost): 2200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 480A. IDss (min): 100uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 400W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 40 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IXFR120N20P
N-channel transistor, 105A, 2uA, 17m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 200V. ID (T=25°C): 105A. Idss (max): 2uA. On-resistance Rds On: 17m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 200V. C(in): 9100pF. Cost): 2200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 480A. IDss (min): 100uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 400W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 40 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
16.38$ VAT incl.
(16.38$ excl. VAT)
16.38$
Quantity in stock : 10
IXFR180N15P

IXFR180N15P

N-channel transistor, 75A, 100A, 1.5mA, 13m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247, 150V. ID (T=100...
IXFR180N15P
N-channel transistor, 75A, 100A, 1.5mA, 13m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247, 150V. ID (T=100°C): 75A. ID (T=25°C): 100A. Idss (max): 1.5mA. On-resistance Rds On: 13m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Voltage Vds(max): 150V. C(in): 7000pF. Cost): 2250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 380A. IDss (min): 25uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: dv/dt 10V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V
IXFR180N15P
N-channel transistor, 75A, 100A, 1.5mA, 13m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247, 150V. ID (T=100°C): 75A. ID (T=25°C): 100A. Idss (max): 1.5mA. On-resistance Rds On: 13m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Voltage Vds(max): 150V. C(in): 7000pF. Cost): 2250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 380A. IDss (min): 25uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: dv/dt 10V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V
Set of 1
25.34$ VAT incl.
(25.34$ excl. VAT)
25.34$
Quantity in stock : 10
IXFR200N10P

IXFR200N10P

N-channel transistor, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V...
IXFR200N10P
N-channel transistor, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. On-resistance Rds On: 0.009 Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 100V. C(in): 7600pF. Cost): 2900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 400A. IDss (min): 25uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: dv/dt 10V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V
IXFR200N10P
N-channel transistor, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. On-resistance Rds On: 0.009 Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 100V. C(in): 7600pF. Cost): 2900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. G-S Protection: no. Id(imp): 400A. IDss (min): 25uA. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: dv/dt 10V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
22.58$ VAT incl.
(22.58$ excl. VAT)
22.58$
Quantity in stock : 25
IXFX34N80

IXFX34N80

N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (...
IXFX34N80
N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
IXFX34N80
N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
Set of 1
26.57$ VAT incl.
(26.57$ excl. VAT)
26.57$
Quantity in stock : 36
IXGH24N60CD1

IXGH24N60CD1

N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing ...
IXGH24N60CD1
N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Germanium diode: no. Collector current: 48A. Ic(pulse): 80A. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V
IXGH24N60CD1
N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Germanium diode: no. Collector current: 48A. Ic(pulse): 80A. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V
Set of 1
13.54$ VAT incl.
(13.54$ excl. VAT)
13.54$
Quantity in stock : 23
IXGH32N60BU1

IXGH32N60BU1

N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: T...
IXGH32N60BU1
N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V
IXGH32N60BU1
N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V
Set of 1
19.33$ VAT incl.
(19.33$ excl. VAT)
19.33$
Quantity in stock : 17
IXGR48N60C3D1

IXGR48N60C3D1

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing ...
IXGR48N60C3D1
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1960pF. Cost): 220pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 25 ns. Function: High Speed ​​PT IGBTs for 40-100kHz Switching. Germanium diode: no. Collector current: 56A. Ic(pulse): 230A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Electrically Isolated Back Surface. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 19 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IXGR48N60C3D1
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1960pF. Cost): 220pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 25 ns. Function: High Speed ​​PT IGBTs for 40-100kHz Switching. Germanium diode: no. Collector current: 56A. Ic(pulse): 230A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Electrically Isolated Back Surface. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 19 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
18.73$ VAT incl.
(18.73$ excl. VAT)
18.73$
Quantity in stock : 48
IXGR60N60C2

IXGR60N60C2

N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOP...
IXGR60N60C2
N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. C(in): 3900pF. Cost): 280pF. CE diode: no. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Germanium diode: no. Collector current: 75A. Ic(pulse): 300A. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: ICM TC=25°C, 1ms 300A. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V
IXGR60N60C2
N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. C(in): 3900pF. Cost): 280pF. CE diode: no. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Germanium diode: no. Collector current: 75A. Ic(pulse): 300A. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: ICM TC=25°C, 1ms 300A. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V
Set of 1
14.39$ VAT incl.
(14.39$ excl. VAT)
14.39$
Quantity in stock : 37
IXGR60N60C3D1

IXGR60N60C3D1

N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (acco...
IXGR60N60C3D1
N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 2113pF. Cost): 197pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: IGBT With Ultrafast Soft Recovery Diode. Germanium diode: no. Collector current: 75A. Ic(pulse): 260A. Note: insulation 2500V (50/60Hz RMS, t=1minute). Number of terminals: 3. Pd (Power Dissipation, Max): 268W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 127 ns. Td(on): 43 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V
IXGR60N60C3D1
N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 2113pF. Cost): 197pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: IGBT With Ultrafast Soft Recovery Diode. Germanium diode: no. Collector current: 75A. Ic(pulse): 260A. Note: insulation 2500V (50/60Hz RMS, t=1minute). Number of terminals: 3. Pd (Power Dissipation, Max): 268W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 127 ns. Td(on): 43 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V
Set of 1
12.10$ VAT incl.
(12.10$ excl. VAT)
12.10$
Quantity in stock : 3
IXTA36N30P

IXTA36N30P

N-channel transistor, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°...
IXTA36N30P
N-channel transistor, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 0.092 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no
IXTA36N30P
N-channel transistor, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 0.092 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no
Set of 1
7.83$ VAT incl.
(7.83$ excl. VAT)
7.83$
Quantity in stock : 2
IXTH24N50

IXTH24N50

N-channel transistor, PCB soldering, TO-247AD, 500V, 24A. Housing: PCB soldering. Housing: TO-247AD....
IXTH24N50
N-channel transistor, PCB soldering, TO-247AD, 500V, 24A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH24N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.23 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IXTH24N50
N-channel transistor, PCB soldering, TO-247AD, 500V, 24A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH24N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.23 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
23.61$ VAT incl.
(23.61$ excl. VAT)
23.61$
Quantity in stock : 7
IXTH5N100A

IXTH5N100A

N-channel transistor, PCB soldering, TO-247AD, 1 kV, 5A. Housing: PCB soldering. Housing: TO-247AD. ...
IXTH5N100A
N-channel transistor, PCB soldering, TO-247AD, 1 kV, 5A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 5A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH5N100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
IXTH5N100A
N-channel transistor, PCB soldering, TO-247AD, 1 kV, 5A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 5A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH5N100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
20.87$ VAT incl.
(20.87$ excl. VAT)
20.87$
Quantity in stock : 5
IXTH96N20P

IXTH96N20P

N-channel transistor, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25Â...
IXTH96N20P
N-channel transistor, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. On-resistance Rds On: 24m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 4800pF. Cost): 1020pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 225A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V
IXTH96N20P
N-channel transistor, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. On-resistance Rds On: 24m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 4800pF. Cost): 1020pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 225A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V
Set of 1
12.60$ VAT incl.
(12.60$ excl. VAT)
12.60$
Quantity in stock : 110
IXTP36N30P

IXTP36N30P

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25Â...
IXTP36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
IXTP36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
Set of 1
7.08$ VAT incl.
(7.08$ excl. VAT)
7.08$
Quantity in stock : 26
IXTP50N25T

IXTP50N25T

N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150u...
IXTP50N25T
N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150uA. On-resistance Rds On: 92 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 4000pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 130A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
IXTP50N25T
N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150uA. On-resistance Rds On: 92 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 4000pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 130A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
10.79$ VAT incl.
(10.79$ excl. VAT)
10.79$
Quantity in stock : 3
IXTP6N100D2

IXTP6N100D2

Housing: TO220-3. Assembly/installation: THT. Reaction time: 41ns. Packaging: tubus. Type of transis...
IXTP6N100D2
Housing: TO220-3. Assembly/installation: THT. Reaction time: 41ns. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 1kV. Drain current: 6A. On-state resistance: 2.2 Ohms. Power: 300W
IXTP6N100D2
Housing: TO220-3. Assembly/installation: THT. Reaction time: 41ns. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 1kV. Drain current: 6A. On-state resistance: 2.2 Ohms. Power: 300W
Set of 1
20.23$ VAT incl.
(20.23$ excl. VAT)
20.23$
Quantity in stock : 38
IXTP90N055T

IXTP90N055T

N-channel transistor, 75A, 90A, 250uA, 0.066 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25Â...
IXTP90N055T
N-channel transistor, 75A, 90A, 250uA, 0.066 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 250uA. On-resistance Rds On: 0.066 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2500pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IXTP90N055T
N-channel transistor, 75A, 90A, 250uA, 0.066 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 250uA. On-resistance Rds On: 0.066 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2500pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
4.31$ VAT incl.
(4.31$ excl. VAT)
4.31$
Quantity in stock : 40
IXTP90N055T2

IXTP90N055T2

N-channel transistor, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°...
IXTP90N055T2
N-channel transistor, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 200uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2770pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 240A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IXTP90N055T2
N-channel transistor, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 200uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2770pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 240A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
4.19$ VAT incl.
(4.19$ excl. VAT)
4.19$
Quantity in stock : 7
IXTQ36N30P

IXTQ36N30P

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C)...
IXTQ36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
IXTQ36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
Set of 1
9.10$ VAT incl.
(9.10$ excl. VAT)
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Quantity in stock : 38
IXTQ460P2

IXTQ460P2

N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=10...
IXTQ460P2
N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. On-resistance Rds On: 270 milliOhms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2890pF. Cost): 280pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 50A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V
IXTQ460P2
N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. On-resistance Rds On: 270 milliOhms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2890pF. Cost): 280pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 50A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V
Set of 1
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