N-channel FETs and MOSFETs

N-channel transistor, 63A, 89A, 250uA, 6.5m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. On-resistance Rds On: 6.5m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2900pF. Cost): 420pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 21ms. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 360A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: AUTOMOTIVE MOSFET. G-S Protection: no

N-channel transistor, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 161A. Idss (max): 150uA. On-resistance Rds On: 2.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4380pF. Cost): 940pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 39 ns. Type of transistor: MOSFET. Id(imp): 620A. IDss (min): 1uA. Marking on the case: LR7843. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 34 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V. Function: Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance. G-S Protection: no

N-channel transistor, 46A, 65A, 150uA, 6.3m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 150uA. On-resistance Rds On: 6.3m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 1030pF. Cost): 350pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Very low RDS on-resistance at 4.5V VGS. Id(imp): 260A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9.4 ns. Td(on): 8.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 4m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 2150pF. Cost): 480pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Very low RDS on-resistance at 4.5V VGS. Id(imp): 340A. IDss (min): 1uA. Equivalents: IRLR8726PBF, IRLR8726TRLPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 113A, 160A, 150uA, 2.4M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. On-resistance Rds On: 2.4M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 55V, IPAK. Vdss (Drain to Source Voltage): 55V. Housing: IPAK. Product series: HEXFET. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 17A. Gate/source voltage Vgs: 110m Ohms / 9A / 4V. Gate/source voltage Vgs max: -16V. Max: 45W. Mounting Type: SMD

N-channel transistor, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 8.5A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 480pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: Gate control by logic level. IDss (min): 25uA. Pd (Power Dissipation, Max): 47W. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 55V, 18A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 18A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRLZ24NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.1 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 480pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 880pF. Cost): 220pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 55V, 30A, 30A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 30A. Housing (JEDEC standard): 30A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRLZ34NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 8.9 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 880pF. Maximum dissipation Ptot [W]: 68W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 33A, 47A, 250uA, 0.022 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 33A. ID (T=25°C): 47A. Idss (max): 250uA. On-resistance Rds On: 0.022 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1700pF. Cost): 400pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.022 Ohms, TO-220AB, 55V. On-resistance Rds On: 0.022 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 55V. Type of transistor: MOSFET power transistor. Channel type: N. Control: Logic-Level. Max drain current: 41A. Power: 83W

N-channel transistor, 31A, TO-220, TO-220AA, 390V. Ic(T=100°C): 31A. Housing: TO-220. Housing (according to data sheet): TO-220AA. Collector/emitter voltage Vceo: 390V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: Ic 46A @ 25°C, 31A @ 110°C. Germanium diode: Suppressor. Collector current: 46A. Marking on the case: V5036P. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10.8 ns. Td(on): 7 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Gate/emitter voltage VGE: 10V. Gate/emitter voltage VGE(th) min.: 1.3V. Spec info: td(On) 0.7us, td(Off) 10.8us. CE diode: no

N-channel transistor, 130A, 500uA, 0.01 Ohms, D2PAK ( TO-263 ), TO-263, 100V. ID (T=25°C): 130A. Idss (max): 500uA. On-resistance Rds On: 0.01 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Voltage Vds(max): 100V. C(in): 6600pF. Cost): 640pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 300A. IDss (min): 10uA. Number of terminals: 2. Pd (Power Dissipation, Max): 360W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 16 ns. Technology: TrenchT2 HiPerFet Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AD, 800V, 13A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFH13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.8 Ohms @ 6.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 63 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AD, 500V, 26A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 26A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFH26N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 65 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 26A, 1mA, 0.25 Ohms, TO-247, TO-247AD, 600V. ID (T=25°C): 26A. Idss (max): 1mA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AD. Voltage Vds(max): 600V. C(in): 4700pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 104A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V. Spec info: dv/dt 10V/ns. G-S Protection: no

N-channel transistor, 32A, 1mA, 0.15 Ohms, TO-247, TO-247AD, 500V. ID (T=25°C): 32A. Idss (max): 1mA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AD. Voltage Vds(max): 500V. C(in): 5700pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 128A. IDss (min): 200uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 35 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AD, 200V, 58A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 58A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFH58N20. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 4400pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-264AA, 300V, 140A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 300V. Drain Current Id [A] @ 25°C: 140A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK140N30P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.024 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 14000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 34A, 2mA, 0.24 Ohms, TO-264 ( TOP-3L ), TO-264AA, 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. IDss (min): 100uA. Pd (Power Dissipation, Max): 560W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 25. Spec info: dv/dt 5V/ns. G-S Protection: no

N-channel transistor, 44A, 2mA, 0.12 Ohms, TO-264 ( TOP-3L ), TO-264AA, 500V. ID (T=25°C): 44A. Idss (max): 2mA. On-resistance Rds On: 0.12 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. C(in): 8400pF. Cost): 900pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: F-Class--MHz Switching. Id(imp): 176A. IDss (min): 400uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. G-S Protection: no

N-channel transistor, 44A, 1.5mA, 0.19 Ohms, TO-264 ( TOP-3L ), TO-264AA, 800V. ID (T=25°C): 44A. Idss (max): 1.5mA. On-resistance Rds On: 0.19 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 800V. RoHS: yes. C(in): 12pF. Cost): 910pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Enhancement Mode, Avalanche Rated. Id(imp): 100A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1200W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHVTM HiPerFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. G-S Protection: no

N-channel transistor, PCB soldering, TO-264AA, 500V, 44A, 25, TO-264 ( TOP-3L ), TO-264AA, 500V. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 44A. Housing (JEDEC standard): 25. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 8400pF. Maximum dissipation Ptot [W]: 500W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns

N-channel transistor, PCB soldering, TO-264AA, 600V, 48A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 48A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 8860pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C