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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V - IXTQ460P2

N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V - IXTQ460P2
Quantity excl. VAT VAT incl.
1 - 1 9.08$ 9.08$
2 - 2 8.62$ 8.62$
3 - 4 8.44$ 8.44$
5 - 9 8.17$ 8.17$
10 - 19 7.99$ 7.99$
20 - 29 7.72$ 7.72$
30 - 38 7.44$ 7.44$
Quantity U.P
1 - 1 9.08$ 9.08$
2 - 2 8.62$ 8.62$
3 - 4 8.44$ 8.44$
5 - 9 8.17$ 8.17$
10 - 19 7.99$ 7.99$
20 - 29 7.72$ 7.72$
30 - 38 7.44$ 7.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 38
Set of 1

N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V - IXTQ460P2. N-channel transistor, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. On-resistance Rds On: 270 milliOhms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2890pF. Cost): 280pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 50A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V. Original product from manufacturer IXYS. Quantity in stock updated on 08/06/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 110
IXTP36N30P

IXTP36N30P

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25Â...
IXTP36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
IXTP36N30P
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V
Set of 1
7.08$ VAT incl.
(7.08$ excl. VAT)
7.08$

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