Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 19.33$ | 19.33$ |
2 - 2 | 18.36$ | 18.36$ |
3 - 4 | 17.98$ | 17.98$ |
5 - 9 | 17.40$ | 17.40$ |
10 - 14 | 17.01$ | 17.01$ |
15 - 19 | 16.43$ | 16.43$ |
20 - 23 | 15.85$ | 15.85$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 19.33$ | 19.33$ |
2 - 2 | 18.36$ | 18.36$ |
3 - 4 | 17.98$ | 17.98$ |
5 - 9 | 17.40$ | 17.40$ |
10 - 14 | 17.01$ | 17.01$ |
15 - 19 | 16.43$ | 16.43$ |
20 - 23 | 15.85$ | 15.85$ |
N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1. N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer IXYS. Quantity in stock updated on 08/06/2025, 10:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.