Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 14.39$ | 14.39$ |
2 - 2 | 13.68$ | 13.68$ |
3 - 4 | 12.96$ | 12.96$ |
5 - 9 | 12.24$ | 12.24$ |
10 - 14 | 11.95$ | 11.95$ |
15 - 19 | 11.66$ | 11.66$ |
20 - 48 | 11.23$ | 11.23$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 14.39$ | 14.39$ |
2 - 2 | 13.68$ | 13.68$ |
3 - 4 | 12.96$ | 12.96$ |
5 - 9 | 12.24$ | 12.24$ |
10 - 14 | 11.95$ | 11.95$ |
15 - 19 | 11.66$ | 11.66$ |
20 - 48 | 11.23$ | 11.23$ |
N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V - IXGR60N60C2. N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. C(in): 3900pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Collector current: 75A. Ic(pulse): 300A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Note: HiPerFAST IGBT transistor. Spec info: ICM TC=25°C, 1ms 300A. CE diode: no. Germanium diode: no. Quantity in stock updated on 20/04/2025, 01:25.
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