N-channel FETs and MOSFETs

N-channel transistor, 5.5V, 64A, 1mA, 85m Ohms, TO-264 ( TOP-3L ), TO-264AA, 500V. ID (T=100°C): 5.5V. ID (T=25°C): 64A. Idss (max): 1mA. On-resistance Rds On: 85m Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. RoHS: yes. C(in): 7900pF. Cost): 790pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Id(imp): 150A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 830W. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Spec info: dv/dt 20V/ns. G-S Protection: no

N-channel transistor, PCB soldering, TO-264AA, 600V, 64A. Housing: PCB soldering. Housing: TO-264AA. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 64A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N60P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.096 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 12000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SOT-227B (ISOTOP), 75V, 480A. Housing: SOT-227B (ISOTOP). Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 480A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: GigaMOS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0019 Ohms @ 480A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 48 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 41000pF. Maximum dissipation Ptot [W]: 940W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 105A, 2uA, 17m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 200V. ID (T=25°C): 105A. Idss (max): 2uA. On-resistance Rds On: 17m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 200V. C(in): 9100pF. Cost): 2200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 480A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 400W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 40 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

N-channel transistor, 75A, 100A, 1.5mA, 13m Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247, 150V. ID (T=100°C): 75A. ID (T=25°C): 100A. Idss (max): 1.5mA. On-resistance Rds On: 13m Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Voltage Vds(max): 150V. C(in): 7000pF. Cost): 2250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 380A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Spec info: dv/dt 10V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

N-channel transistor, 75A, 133A, 1mA, 0.009 Ohms, ISOPLUS247 ( TO-247 ), ISOPLUS247 ( TO-247 ), 100V. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. On-resistance Rds On: 0.009 Ohms. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Voltage Vds(max): 100V. C(in): 7600pF. Cost): 2900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 400A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Spec info: dv/dt 5V/ns. G-S Protection: no

N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Collector current: 48A. Ic(pulse): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Note: HiPerFAST IGBT transistor. CE diode: yes. Germanium diode: no

N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. CE diode: yes

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1960pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 25 ns. Function: High Speed ​​PT IGBTs for 40-100kHz Switching. Collector current: 56A. Ic(pulse): 230A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 19 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Spec info: Electrically Isolated Back Surface. CE diode: yes. Germanium diode: no

N-channel transistor, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. C(in): 3900pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Collector current: 75A. Ic(pulse): 300A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Note: HiPerFAST IGBT transistor. Spec info: ICM TC=25°C, 1ms 300A. CE diode: no. Germanium diode: no

N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 2113pF. Cost): 197pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: IGBT With Ultrafast Soft Recovery Diode. Collector current: 75A. Ic(pulse): 260A. Pd (Power Dissipation, Max): 268W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 127 ns. Td(on): 43 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Note: insulation 2500V (50/60Hz RMS, t=1minute). CE diode: yes. Germanium diode: no

N-channel transistor, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 0.092 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AD, 500V, 24A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH24N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.23 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AD, 1 kV, 5A. Housing: PCB soldering. Housing: TO-247AD. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 5A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH5N100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. On-resistance Rds On: 24m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 4800pF. Cost): 1020pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 225A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V. G-S Protection: no

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no

N-channel transistor, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150uA. On-resistance Rds On: 92 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 4000pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 130A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 75A, 90A, 250uA, 0.066 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 250uA. On-resistance Rds On: 0.066 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2500pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 240A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 200uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. C(in): 2770pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 240A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 24A, 200uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V, 270 milliOhms. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. On-resistance Rds On: 270 milliOhms. C(in): 2890pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 50A. IDss (min): 25uA. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 220A. IDss (min): 100uA. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 8 Ohms, TO-92, TO-92, 25V. On-resistance Rds On: 8 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 160pF. Cost): 35pF. Channel type: N. Type of transistor: JFET. IDss (min): 100mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Td(off): 5 ns. Td(on): 6 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.7V. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 0.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

N-channel transistor, 30 Ohms, 35V. On-resistance Rds On: 30 Ohms. Voltage Vds(max): 35V. Channel type: N. Type of transistor: FET. Function: Up 10V. IDss (min): 20mA. IGF: 50mA. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Gate/source voltage (off) max.: 10V. Gate/source voltage (off) min.: 3V. Quantity per case: 1