Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.54$ | 13.54$ |
2 - 2 | 12.86$ | 12.86$ |
3 - 4 | 12.59$ | 12.59$ |
5 - 9 | 12.18$ | 12.18$ |
10 - 14 | 11.91$ | 11.91$ |
15 - 19 | 11.51$ | 11.51$ |
20 - 36 | 11.10$ | 11.10$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.54$ | 13.54$ |
2 - 2 | 12.86$ | 12.86$ |
3 - 4 | 12.59$ | 12.59$ |
5 - 9 | 12.18$ | 12.18$ |
10 - 14 | 11.91$ | 11.91$ |
15 - 19 | 11.51$ | 11.51$ |
20 - 36 | 11.10$ | 11.10$ |
N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V - IXGH24N60CD1. N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Germanium diode: no. Collector current: 48A. Ic(pulse): 80A. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Original product from manufacturer IXYS. Quantity in stock updated on 08/06/2025, 10:25.
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