Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.03$ | 1.03$ |
5 - 9 | 0.97$ | 0.97$ |
10 - 24 | 0.92$ | 0.92$ |
25 - 47 | 0.87$ | 0.87$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.03$ | 1.03$ |
5 - 9 | 0.97$ | 0.97$ |
10 - 24 | 0.92$ | 0.92$ |
25 - 47 | 0.87$ | 0.87$ |
MJE3055T-FAI. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 17:25.
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