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Semiconductors Transistors

MJE3055T

MJE3055T
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[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.20$ 1.20$
25 - 49 1.13$ 1.13$
50 - 99 1.10$ 1.10$
100 - 187 1.08$ 1.08$
Quantity U.P
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.20$ 1.20$
25 - 49 1.13$ 1.13$
50 - 99 1.10$ 1.10$
100 - 187 1.08$ 1.08$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 187
Set of 1

MJE3055T. RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. Quantity in stock updated on 07/04/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 47
MJE3055T-FAI

MJE3055T-FAI

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: sil...
MJE3055T-FAI
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no
MJE3055T-FAI
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$

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CONN-11008-A

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TIP2955

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PP-1748

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STSF-40P-3-04

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IRFZ44N

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BU406

BU406

Semiconductor material: silicon. FT: 6 MHz. Function: TV-HA. Max hFE gain: 20. Minimum hFE gain: 12....
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