MJE2955T

Quantity	excl. VAT	VAT incl.
1 - 4	0.77$	0.77$
5 - 9	0.73$	0.73$
10 - 24	0.69$	0.69$
25 - 49	0.65$	0.65$
50 - 99	0.64$	0.64$
100 - 249	0.62$	0.62$
250 - 509	0.67$	0.67$

Quantity	U.P
1 - 4	0.77$	0.77$
5 - 9	0.73$	0.73$
10 - 24	0.69$	0.69$
25 - 49	0.65$	0.65$
50 - 99	0.64$	0.64$
100 - 249	0.62$	0.62$
250 - 509	0.67$	0.67$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 509

Set of 1

MJE2955T. Housing: TO-220. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 96

MJE2955T-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifie...

Set of 1

0.82$ VAT incl.
(0.82$ excl. VAT)

0.82$