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Semiconductors Diodes
Diode rectifier bridges

Diode rectifier bridges

220 products available
Products per page :
1...234 56...9
Quantity in stock : 114
DB102G

DB102G

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
DB102G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 100V. Spec info: IFSM--50Ap
DB102G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 100V. Spec info: IFSM--50Ap
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 33
DB104G

DB104G

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
DB104G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Spec info: IFSM--50Ap
DB104G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Spec info: IFSM--50Ap
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 91
DB106

DB106

Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV):...
DB106
Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
DB106
Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 11193
DB107

DB107

Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 1000V. Series: DB. Housing: DIP. Assembl...
DB107
Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 1000V. Series: DB. Housing: DIP. Assembly/installation: PCB through-hole mounting
DB107
Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 1000V. Series: DB. Housing: DIP. Assembly/installation: PCB through-hole mounting
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 909
DB107S

DB107S

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
DB107S
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 7.4x6.2x3.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
DB107S
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 7.4x6.2x3.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 118
DB157S

DB157S

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: DB-S. Con...
DB157S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: DB-S. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 1.5A. Threshold voltage Uf [V]: 1.0V. Peak voltage Urrm [V]: 1000V. Peak current Ifsm [A]: 60A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
DB157S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: DB-S. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 1.5A. Threshold voltage Uf [V]: 1.0V. Peak voltage Urrm [V]: 1000V. Peak current Ifsm [A]: 60A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 30
DB25-12

DB25-12

Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 25...
DB25-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 25A. IFSM: 350A. MRI (max): 10uA. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1200V. Number of terminals: 5. Dimensions of connections: 6.4x0.8mm faston terminal
DB25-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 25A. IFSM: 350A. MRI (max): 10uA. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1200V. Number of terminals: 5. Dimensions of connections: 6.4x0.8mm faston terminal
Set of 1
8.72$ VAT incl.
(8.72$ excl. VAT)
8.72$
Quantity in stock : 6
DB35-06

DB35-06

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: three-phase rectifier...
DB35-06
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: three-phase rectifier bridge. Forward current (AV): 35A. IFSM: 450A. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 5. Dimensions of connections: 6.4x0.8mm faston terminal
DB35-06
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: three-phase rectifier bridge. Forward current (AV): 35A. IFSM: 450A. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 5. Dimensions of connections: 6.4x0.8mm faston terminal
Set of 1
9.18$ VAT incl.
(9.18$ excl. VAT)
9.18$
Quantity in stock : 31
DB35-08

DB35-08

RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Number of ...
DB35-08
RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Number of terminals: 4. Rated current [A]: 35A. Threshold voltage Uf [V]: 1.05V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 450A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals
DB35-08
RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Number of terminals: 4. Rated current [A]: 35A. Threshold voltage Uf [V]: 1.05V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 450A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals
Set of 1
8.19$ VAT incl.
(8.19$ excl. VAT)
8.19$
Quantity in stock : 99
DB35-12

DB35-12

RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 35A. Housing: 28.5x28.5x10...
DB35-12
RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 35A. Housing: 28.5x28.5x10mm. Housing (JEDEC standard): 5mA. Number of terminals: 4. Rated current [A]: 35A. Threshold voltage Uf [V]: 1.05V. Peak voltage Urrm [V]: 1.2 kV. Peak current Ifsm [A]: 450A. Threshold voltage Vf (max): 1.19V. Forward voltage Vf (min): 1.19V. VRRM: 1200V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals
DB35-12
RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 35A. Housing: 28.5x28.5x10mm. Housing (JEDEC standard): 5mA. Number of terminals: 4. Rated current [A]: 35A. Threshold voltage Uf [V]: 1.05V. Peak voltage Urrm [V]: 1.2 kV. Peak current Ifsm [A]: 450A. Threshold voltage Vf (max): 1.19V. Forward voltage Vf (min): 1.19V. VRRM: 1200V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals
Set of 1
9.05$ VAT incl.
(9.05$ excl. VAT)
9.05$
Quantity in stock : 29
DB35-16

DB35-16

Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 35...
DB35-16
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 35A. IFSM: 450A. Equivalents: VISHAY--VS-36MT160. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 5. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V. VRRM: 1600V
DB35-16
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 35A. IFSM: 450A. Equivalents: VISHAY--VS-36MT160. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 5. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V. VRRM: 1600V
Set of 1
10.62$ VAT incl.
(10.62$ excl. VAT)
10.62$
Quantity in stock : 4122
DBLS155G

DBLS155G

Function: Rectifier bridge. Forward current (AV): 1.5A. VRRM: 1000V. Equivalents: DB157S. Series: DB...
DBLS155G
Function: Rectifier bridge. Forward current (AV): 1.5A. VRRM: 1000V. Equivalents: DB157S. Series: DBS. Dimensions: 8.32x6.35x3.05mm. Assembly/installation: surface-mounted component (SMD)
DBLS155G
Function: Rectifier bridge. Forward current (AV): 1.5A. VRRM: 1000V. Equivalents: DB157S. Series: DBS. Dimensions: 8.32x6.35x3.05mm. Assembly/installation: surface-mounted component (SMD)
Set of 1
0.18$ VAT incl.
(0.18$ excl. VAT)
0.18$
Quantity in stock : 23506
DF10M-E3-45

DF10M-E3-45

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: DIP6/4. Configu...
DF10M-E3-45
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: DIP6/4. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 1A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 700V. Peak current Ifsm [A]: 50A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
DF10M-E3-45
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: DIP6/4. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 1A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 700V. Peak current Ifsm [A]: 50A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.98$ VAT incl.
(0.98$ excl. VAT)
0.98$
Quantity in stock : 27
GBI10G

GBI10G

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-pha...
GBI10G
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 10A. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V
GBI10G
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 10A. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V
Set of 1
1.54$ VAT incl.
(1.54$ excl. VAT)
1.54$
Quantity in stock : 90
GBI10J

GBI10J

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
GBI10J
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V
GBI10J
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V
Set of 1
1.56$ VAT incl.
(1.56$ excl. VAT)
1.56$
Quantity in stock : 429
GBI15G

GBI15G

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20m...
GBI15G
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 15A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 200A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
GBI15G
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 15A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 200A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 270
GBI15M

GBI15M

RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm...
GBI15M
RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 15A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
GBI15M
RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 15A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
1.76$ VAT incl.
(1.76$ excl. VAT)
1.76$
Quantity in stock : 71
GBI20G

GBI20G

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-pha...
GBI20G
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 20A. IFSM: 230A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. Dimensions: 30x20x3.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V
GBI20G
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 20A. IFSM: 230A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. Dimensions: 30x20x3.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V
Set of 1
1.70$ VAT incl.
(1.70$ excl. VAT)
1.70$
Quantity in stock : 871
GBI25G

GBI25G

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20m...
GBI25G
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 25A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 300A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
GBI25G
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 25A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 300A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
1.66$ VAT incl.
(1.66$ excl. VAT)
1.66$
Quantity in stock : 313
GBI25M

GBI25M

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20m...
GBI25M
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 25A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 300A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
GBI25M
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 25A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 300A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
2.03$ VAT incl.
(2.03$ excl. VAT)
2.03$
Quantity in stock : 67
GBJ2510

GBJ2510

Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode...
GBJ2510
Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. Three-phase: 0. Forward current (AV): 25A. IFSM: 350A. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1000V
GBJ2510
Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. Three-phase: 0. Forward current (AV): 25A. IFSM: 350A. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1000V
Set of 1
1.92$ VAT incl.
(1.92$ excl. VAT)
1.92$
Quantity in stock : 140
GBJ3510

GBJ3510

Cj: 150pF. Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric struc...
GBJ3510
Cj: 150pF. Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. Forward current (AV): 35A. IFSM: 350A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1000V
GBJ3510
Cj: 150pF. Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. Forward current (AV): 35A. IFSM: 350A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 1000V
Set of 1
1.62$ VAT incl.
(1.62$ excl. VAT)
1.62$
Quantity in stock : 336
GBP308

GBP308

Conditioning: plastic tube. Conditioning unit: 35. Dielectric structure: Diode bridge. Semiconductor...
GBP308
Conditioning: plastic tube. Conditioning unit: 35. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 3A. IFSM: 90A. MRI (max): 10uA. Pitch: 3.8mm. Dimensions: 14.5x10.3x3.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 800V. Number of terminals: 4. Spec info: IFSM--90Ap (t=20ms)
GBP308
Conditioning: plastic tube. Conditioning unit: 35. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 3A. IFSM: 90A. MRI (max): 10uA. Pitch: 3.8mm. Dimensions: 14.5x10.3x3.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V. VRRM: 800V. Number of terminals: 4. Spec info: IFSM--90Ap (t=20ms)
Set of 1
0.41$ VAT incl.
(0.41$ excl. VAT)
0.41$
Quantity in stock : 451
GBPC2506

GBPC2506

Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 600V. Series: GBPC. Number of terminals...
GBPC2506
Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 600V. Series: GBPC. Number of terminals: 4. Dimensions of connections: 6.35x0.8mm faston terminal
GBPC2506
Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 600V. Series: GBPC. Number of terminals: 4. Dimensions of connections: 6.35x0.8mm faston terminal
Set of 1
2.03$ VAT incl.
(2.03$ excl. VAT)
2.03$
Quantity in stock : 173
GBPC2510W

GBPC2510W

Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 1000V. Equivalents: SB35-W. Assembly/in...
GBPC2510W
Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 1000V. Equivalents: SB35-W. Assembly/installation: PCB through-hole mounting
GBPC2510W
Function: Rectifier bridge. Forward current (AV): 25A. VRRM: 1000V. Equivalents: SB35-W. Assembly/installation: PCB through-hole mounting
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$
1...234 56...9

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