Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Three-phase: 0. Forward current (AV): 25A. IFSM: 300A. Equivalents: D25XB60, D25SB80, TS25P06G, GBJ2508, GBK25K. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 30x20x4.6mm ( SIL Bridge ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 800V. Number of terminals: 4. Spec info: 300Ap Peak Forward Surge Current, 8.3ms Single