Cj: 50pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 158A. MRI (min): 5uA. Equivalents: KBU607G, KBU610, GBU6M-E3/45, GBU607C2. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 21.5x18.3x3.4mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: Ifsm 158A (50Hz 10ms), 175A (60Hz 8.3ms)