Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 2.3A. IFSM: 50A. Note: IF(AV) 1.5A, 2.3A (with heat sink). Number of terminals: 4. Pitch: 5.08mm. Dimensions: 19x10x3.5mm. RoHS: yes. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. VRRM: 380V. Spec info: IFSM--50Ap