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GBI10G

GBI10G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.54$ 1.54$
5 - 9 1.46$ 1.46$
10 - 24 1.38$ 1.38$
25 - 27 1.31$ 1.31$
Quantity U.P
1 - 4 1.54$ 1.54$
5 - 9 1.46$ 1.46$
10 - 24 1.38$ 1.38$
25 - 27 1.31$ 1.31$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 27
Set of 1

GBI10G. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 10A. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Quantity in stock updated on 25/12/2024, 04:25.

Equivalent products :

Quantity in stock : 90
GBI10J

GBI10J

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
GBI10J
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V
GBI10J
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V
Set of 1
1.56$ VAT incl.
(1.56$ excl. VAT)
1.56$

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B250C2300A

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Dielectric structure: Diode bridge. Forward current (AV): 2.5A. IFSM: 50A. MRI (min): 10uA. Number o...
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B250C2300-1500

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B80C1500B

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GBI20G

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STRF6653

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B380C2300-1500

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COIL3U3-17A

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Direction of terminals: radial connections. Dimensions: ferrit 6x29mm...
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KBPC1006

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Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
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