Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.54$ | 1.54$ |
5 - 9 | 1.46$ | 1.46$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 27 | 1.31$ | 1.31$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.54$ | 1.54$ |
5 - 9 | 1.46$ | 1.46$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 27 | 1.31$ | 1.31$ |
GBI10G. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 10A. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Quantity in stock updated on 25/12/2024, 04:25.
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