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Semiconductors Diodes Diode rectifier bridges

DB107S

DB107S
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.30$ 0.30$
10 - 24 0.28$ 0.28$
25 - 49 0.27$ 0.27$
50 - 99 0.25$ 0.25$
100 - 249 0.24$ 0.24$
250 - 499 0.21$ 0.21$
500 - 909 0.20$ 0.20$
Quantity U.P
1 - 9 0.30$ 0.30$
10 - 24 0.28$ 0.28$
25 - 49 0.27$ 0.27$
50 - 99 0.25$ 0.25$
100 - 249 0.24$ 0.24$
250 - 499 0.21$ 0.21$
500 - 909 0.20$ 0.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 909
Set of 1

DB107S. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 7.4x6.2x3.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Quantity in stock updated on 24/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 1129
B1000S1500

B1000S1500

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
B1000S1500
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
B1000S1500
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$

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Quantity in stock : 251
MB6S-E3-80

MB6S-E3-80

Semiconductor material: silicon. Function: 230V mains rectifier. Forward current (AV): 0.5A. IFSM: 3...
MB6S-E3-80
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MB6S-E3-80
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B1000D

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Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
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Quantity in stock : 909
DB107S

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Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
DB107S
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Quantity in stock : 61
S1WB80B

S1WB80B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB80B
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3.01$ VAT incl.
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3.01$
Quantity in stock : 77
BTB16-600CW

BTB16-600CW

Production date: 2014/49. Igt (max): 35mA. Igt (Type): 35mA. Ih (max): 35mA. Ih (Type): 35mA. IT(RSM...
BTB16-600CW
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FQPF8N60C

FQPF8N60C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration:...
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Quantity in stock : 13
S1WB60B

S1WB60B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB60B
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10.38$ VAT incl.
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Quantity in stock : 34
S1WBS60

S1WBS60

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WBS60
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S1WBS60
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2.11$ VAT incl.
(2.11$ excl. VAT)
2.11$
Quantity in stock : 10406
1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
1N4004
[LONGDESCRIPTION]
1N4004
[LONGDESCRIPTION]
[MODCATID]
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0.0396$ VAT incl.
(0.0396$ excl. VAT)
0.0396$
Quantity in stock : 14247
CR-06JL7-1R5

CR-06JL7-1R5

Resistance: 1.5 Ohms. Power: 0.25W. Housing: SMD 1206. Tolerance: 5%. Resistance (R): 1R50. Assembly...
CR-06JL7-1R5
[LONGDESCRIPTION]
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0.0051$ VAT incl.
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0.0051$

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