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Semiconductors Diodes Diode rectifier bridges

DB102G

DB102G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.30$ 0.30$
10 - 24 0.28$ 0.28$
25 - 49 0.27$ 0.27$
50 - 99 0.25$ 0.25$
100 - 114 0.23$ 0.23$
Quantity U.P
1 - 9 0.30$ 0.30$
10 - 24 0.28$ 0.28$
25 - 49 0.27$ 0.27$
50 - 99 0.25$ 0.25$
100 - 114 0.23$ 0.23$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 114
Set of 1

DB102G. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 100V. Spec info: IFSM--50Ap. Quantity in stock updated on 24/12/2024, 01:25.

Equivalent products :

Quantity in stock : 563
B1000D

B1000D

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
B1000D
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--50Ap
B1000D
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--50Ap
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 33
DB104G

DB104G

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
DB104G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Spec info: IFSM--50Ap
DB104G
Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Spec info: IFSM--50Ap
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 91
DB106

DB106

Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV):...
DB106
Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
DB106
Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 13
S1WB60B

S1WB60B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB60B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
S1WB60B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
Set of 1
10.38$ VAT incl.
(10.38$ excl. VAT)
10.38$

We also recommend :

Quantity in stock : 1129
B1000S1500

B1000S1500

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
B1000S1500
[LONGDESCRIPTION]
B1000S1500
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 61
S1WB80B

S1WB80B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB80B
[LONGDESCRIPTION]
S1WB80B
[LONGDESCRIPTION]
[MODCATID]
[LOT]
3.01$ VAT incl.
(3.01$ excl. VAT)
3.01$
Quantity in stock : 563
B1000D

B1000D

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
B1000D
[LONGDESCRIPTION]
B1000D
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 909
DB107S

DB107S

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
DB107S
[LONGDESCRIPTION]
DB107S
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 4
MA8910

MA8910

Note: Input--180-276V 40W...
MA8910
[LONGDESCRIPTION]
MA8910
[LONGDESCRIPTION]
[MODCATID]
[LOT]
11.63$ VAT incl.
(11.63$ excl. VAT)
11.63$
Quantity in stock : 10406
1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
1N4004
[LONGDESCRIPTION]
1N4004
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0396$ VAT incl.
(0.0396$ excl. VAT)
0.0396$
Quantity in stock : 34
S1WBS60

S1WBS60

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WBS60
[LONGDESCRIPTION]
S1WBS60
[LONGDESCRIPTION]
[MODCATID]
[LOT]
2.11$ VAT incl.
(2.11$ excl. VAT)
2.11$
Quantity in stock : 47909
1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
1N4148
[LONGDESCRIPTION]
1N4148
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0164$ VAT incl.
(0.0164$ excl. VAT)
0.0164$
Quantity in stock : 38
6N135

6N135

Baud rate: 1 MBit/s. CTR: 7...50 %. Diode IF: 25uA. Diode Power: 45mW. Diode threshold voltage: 1.4V...
6N135
[LONGDESCRIPTION]
6N135
[LONGDESCRIPTION]
[MODCATID]
[LOT]
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 91
DB106

DB106

Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV):...
DB106
[LONGDESCRIPTION]
DB106
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$

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