Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 4A. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. VRRM: 800V. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)