Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 3A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: BR306, KBPC106. Dimensions of connections: diameter 0.9mm. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4