Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.36$ | 1.36$ |
5 - 9 | 1.30$ | 1.30$ |
10 - 24 | 1.23$ | 1.23$ |
25 - 49 | 1.16$ | 1.16$ |
50 - 99 | 1.13$ | 1.13$ |
100 - 152 | 1.02$ | 1.02$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.36$ | 1.36$ |
5 - 9 | 1.30$ | 1.30$ |
10 - 24 | 1.23$ | 1.23$ |
25 - 49 | 1.16$ | 1.16$ |
50 - 99 | 1.13$ | 1.13$ |
100 - 152 | 1.02$ | 1.02$ |
STP55NF06. C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P55NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.
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