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STP55NF06

STP55NF06
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Quantity excl. VAT VAT incl.
1 - 4 1.36$ 1.36$
5 - 9 1.30$ 1.30$
10 - 24 1.23$ 1.23$
25 - 49 1.16$ 1.16$
50 - 99 1.13$ 1.13$
100 - 152 1.02$ 1.02$
Quantity U.P
1 - 4 1.36$ 1.36$
5 - 9 1.30$ 1.30$
10 - 24 1.23$ 1.23$
25 - 49 1.16$ 1.16$
50 - 99 1.13$ 1.13$
100 - 152 1.02$ 1.02$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 152
Set of 1

STP55NF06. C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P55NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

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