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1 - 4 | 1.36$ | 1.36$ |
5 - 9 | 1.30$ | 1.30$ |
10 - 24 | 1.26$ | 1.26$ |
25 - 49 | 1.23$ | 1.23$ |
50 - 99 | 1.20$ | 1.20$ |
100 - 188 | 1.07$ | 1.07$ |
Quantity | U.P | |
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1 - 4 | 1.36$ | 1.36$ |
5 - 9 | 1.30$ | 1.30$ |
10 - 24 | 1.26$ | 1.26$ |
25 - 49 | 1.23$ | 1.23$ |
50 - 99 | 1.20$ | 1.20$ |
100 - 188 | 1.07$ | 1.07$ |
N-channel transistor, 0.015 Ohms, TO-220, TO-220, 60V, 60V, TO220 - STP55NF06. N-channel transistor, 0.015 Ohms, TO-220, TO-220, 60V, 60V, TO220. On-resistance Rds On: 0.015 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Vdss (Drain to Source Voltage): 60V. Housing: TO220. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Series: 1300pF. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 50A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 75 ns. Vgs(th) (Max) @ Id: MOSFET. Qg (Total Gate Charge, Max @ Vgs): High-speed switching. Gate/source voltage Vgs max: -20V. Operating temperature: 35A. Mounting Type: THT. Features: 1uA. Information: P55NF06. MSL: 3. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 06/07/2025, 16:25.
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