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Semiconductors Transistors

2SA1013

2SA1013
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.38$ 0.38$
10 - 24 0.36$ 0.36$
25 - 49 0.34$ 0.34$
50 - 99 0.32$ 0.32$
100 - 249 0.31$ 0.31$
250 - 499 0.27$ 0.27$
500 - 4415 0.26$ 0.26$
Quantity U.P
1 - 9 0.38$ 0.38$
10 - 24 0.36$ 0.36$
25 - 49 0.34$ 0.34$
50 - 99 0.32$ 0.32$
100 - 249 0.31$ 0.31$
250 - 499 0.27$ 0.27$
500 - 4415 0.26$ 0.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4415
Set of 1

2SA1013. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 135
2SB647

2SB647

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max h...
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 146
2SB649A

2SB649A

Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. ...
2SB649A
Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
2SB649A
Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$

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Quantity in stock : 7694
2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
2N5551
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2SA1302

2SA1302

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1302
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Quantity in stock : 26
2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
2SC3281
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Quantity in stock : 193
2SA1015GR

2SA1015GR

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: audio ampli...
2SA1015GR
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2SA1015GR
[LONGDESCRIPTION]
[MODCATID]
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0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 6084
2N5401

2N5401

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
2N5401
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2N5401
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0.11$ VAT incl.
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Quantity in stock : 120
2SA1837

2SA1837

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-L. Max ...
2SA1837
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2SA1837
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1.27$ VAT incl.
(1.27$ excl. VAT)
1.27$
Quantity in stock : 42
2SB817

2SB817

Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 12A. Pd (Power...
2SB817
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2SB817
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2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$
Quantity in stock : 36
2SC4793

2SC4793

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
2SC4793
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2.05$ VAT incl.
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2.05$

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