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2SA1943

2SA1943
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Quantity excl. VAT VAT incl.
1 - 1 6.88$ 6.88$
2 - 2 6.54$ 6.54$
3 - 4 6.19$ 6.19$
5 - 9 5.85$ 5.85$
10 - 19 5.71$ 5.71$
20 - 29 5.58$ 5.58$
30 - 286 5.37$ 5.37$
Quantity U.P
1 - 1 6.88$ 6.88$
2 - 2 6.54$ 6.54$
3 - 4 6.19$ 6.19$
5 - 9 5.85$ 5.85$
10 - 19 5.71$ 5.71$
20 - 29 5.58$ 5.58$
30 - 286 5.37$ 5.37$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 286
Set of 1

2SA1943. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.

Equivalent products :

Out of stock
2SA1962

2SA1962

Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Collector current: 15A. Number of...
2SA1962
Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Function: NF-HI-FI. Spec info: complementary transistor (pair) 2SC5242. BE diode: no. CE diode: no
2SA1962
Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Function: NF-HI-FI. Spec info: complementary transistor (pair) 2SC5242. BE diode: no. CE diode: no
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 154
MJL21193

MJL21193

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min...
MJL21193
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no
MJL21193
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$

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Quantity in stock : 148
MJL21194

MJL21194

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @...
MJL21194
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MJL21194
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8.73$ VAT incl.
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Quantity in stock : 46
MJ2955

MJ2955

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Switching ...
MJ2955
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2.76$ VAT incl.
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2.76$
Out of stock
2SA1302

2SA1302

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1302
[LONGDESCRIPTION]
2SA1302
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2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 22
2N3773

2N3773

Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Collector current: 16A. Pd (Powe...
2N3773
[LONGDESCRIPTION]
2N3773
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3.73$ VAT incl.
(3.73$ excl. VAT)
3.73$
Quantity in stock : 650
FRN01WK0101A10

FRN01WK0101A10

Resistance: 100 Ohms. Power: 1W. Resistor type: fuse resistor. Temperature stability: 350ppm/°C. Nu...
FRN01WK0101A10
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FRN01WK0101A10
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0.11$ VAT incl.
(0.11$ excl. VAT)
0.11$
Quantity in stock : 117
BD238

BD238

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Conditioning: ...
BD238
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BD238
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0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
Quantity in stock : 109
2SC2240GR

2SC2240GR

Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: ...
2SC2240GR
[LONGDESCRIPTION]
2SC2240GR
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[MODCATID]
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0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 18
PT15NV02-101A2020

PT15NV02-101A2020

Resistance: 100 Ohms. Diameter: 15mm. Number of channels: 1. Resistor type: carbon layer. Temperatur...
PT15NV02-101A2020
[LONGDESCRIPTION]
PT15NV02-101A2020
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0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$
Quantity in stock : 252
2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
2SC5200
[LONGDESCRIPTION]
2SC5200
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[MODCATID]
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7.86$ VAT incl.
(7.86$ excl. VAT)
7.86$
Quantity in stock : 51
NJW3281

NJW3281

C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function:...
NJW3281
[LONGDESCRIPTION]
NJW3281
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8.04$ VAT incl.
(8.04$ excl. VAT)
8.04$

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