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Semiconductors Transistors

2SC5200

2SC5200
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[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 7.86$ 7.86$
2 - 2 7.47$ 7.47$
3 - 4 7.08$ 7.08$
5 - 9 6.68$ 6.68$
10 - 19 6.53$ 6.53$
20 - 29 6.37$ 6.37$
30 - 252 6.13$ 6.13$
Quantity U.P
1 - 1 7.86$ 7.86$
2 - 2 7.47$ 7.47$
3 - 4 7.08$ 7.08$
5 - 9 6.68$ 6.68$
10 - 19 6.53$ 6.53$
20 - 29 6.37$ 6.37$
30 - 252 6.13$ 6.13$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 252
Set of 1

2SC5200. Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 148
MJL21194

MJL21194

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @...
MJL21194
Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
MJL21194
Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$
Quantity in stock : 1
FJL4315-O

FJL4315-O

Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 8...
FJL4315-O
Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 17A. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O
FJL4315-O
Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 17A. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O
Set of 1
6.33$ VAT incl.
(6.33$ excl. VAT)
6.33$
Quantity in stock : 27
2SC5242

2SC5242

Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor...
2SC5242
Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Collector current: 15A. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Spec info: complementary transistor (pair) 2SA1962. BE diode: no. CE diode: no
2SC5242
Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Collector current: 15A. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Spec info: complementary transistor (pair) 2SA1962. BE diode: no. CE diode: no
Set of 1
2.72$ VAT incl.
(2.72$ excl. VAT)
2.72$

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2SA1962

2SA1962

Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Collector current: 15A. Number of...
2SA1962
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Quantity in stock : 1066
MPSA06

MPSA06

BE resistor: 10. Cost): 300pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100M...
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2SB1659

2SB1659

Cost): 100pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT...
2SB1659
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2SB1659
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[MODCATID]
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8.18$ VAT incl.
(8.18$ excl. VAT)
8.18$
Quantity in stock : 31
2SC1845

2SC1845

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI au...
2SC1845
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2SC1845
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1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 36
2SC4793

2SC4793

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
2SC4793
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2SC4793
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2.05$ VAT incl.
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2.05$
Quantity in stock : 6
2SA1381

2SA1381

Cost): 3.1pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT:...
2SA1381
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2SA1381
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1.14$ VAT incl.
(1.14$ excl. VAT)
1.14$
Quantity in stock : 109
2SC2240GR

2SC2240GR

Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: ...
2SC2240GR
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2SC2240GR
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0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 96
2SC3423

2SC3423

Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Collector current: 0.05A. Pd (Power Di...
2SC3423
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2SC3423
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1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$
Quantity in stock : 214
CEL470UF25V-B

CEL470UF25V-B

DC voltage: 25V. Capacitance: 470uF. Diameter: 8mm. Lifespan: 2000 hours. Lenght: 14mm. Configuratio...
CEL470UF25V-B
[LONGDESCRIPTION]
CEL470UF25V-B
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[LOT]
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$

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