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Semiconductors Transistors

2N2222A

2N2222A
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.47$ 1.47$
5 - 9 1.40$ 1.40$
10 - 24 1.32$ 1.32$
25 - 49 1.25$ 1.25$
50 - 99 1.22$ 1.22$
100 - 249 1.19$ 1.19$
250+ 1.13$ 1.13$
Quantity U.P
1 - 4 1.47$ 1.47$
5 - 9 1.40$ 1.40$
10 - 24 1.32$ 1.32$
25 - 49 1.25$ 1.25$
50 - 99 1.22$ 1.22$
100 - 249 1.19$ 1.19$
250+ 1.13$ 1.13$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2N2222A. RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2222A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Tf(max): 60 ns. Tf(min): 60 ns. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Quantity in stock updated on 23/12/2024, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 250
KSP2222A

KSP2222A

Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. M...
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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R46KI322000M2M

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2N2222A-PL

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2N2222A

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RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: P...
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PN2222A

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BC547C

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