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Semiconductors Transistors

2SA965

2SA965
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.26$ 2.26$
5 - 9 2.14$ 2.14$
10 - 24 2.03$ 2.03$
25 - 36 1.92$ 1.92$
Quantity U.P
1 - 4 2.26$ 2.26$
5 - 9 2.14$ 2.14$
10 - 24 2.03$ 2.03$
25 - 36 1.92$ 1.92$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 36
Set of 1

2SA965. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: PCT Process. Max hFE gain: 240. Minimum hFE gain: 80. Collector current: 0.8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2235-Y. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 4415
2SA1013

2SA1013

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain...
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 135
2SB647

2SB647

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max h...
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$

We also recommend :

Quantity in stock : 71
2SD667

2SD667

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Low-Frequency Power Am...
2SD667
[LONGDESCRIPTION]
2SD667
[LONGDESCRIPTION]
[MODCATID]
[LOT]
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 193
2SA1015GR

2SA1015GR

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: audio ampli...
2SA1015GR
[LONGDESCRIPTION]
2SA1015GR
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 514
2SC1815

2SC1815

Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain:...
2SC1815
[LONGDESCRIPTION]
2SC1815
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$
Quantity in stock : 362
TIP42C

TIP42C

Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
TIP42C
[LONGDESCRIPTION]
TIP42C
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 31
2SC1845

2SC1845

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI au...
2SC1845
[LONGDESCRIPTION]
2SC1845
[LONGDESCRIPTION]
[MODCATID]
[LOT]
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 257
TIP41C

TIP41C

Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. ...
TIP41C
[LONGDESCRIPTION]
TIP41C
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 286
2SA1943

2SA1943

Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT:...
2SA1943
[LONGDESCRIPTION]
2SA1943
[LONGDESCRIPTION]
[MODCATID]
[LOT]
6.88$ VAT incl.
(6.88$ excl. VAT)
6.88$
Quantity in stock : 4328
CFR1-4W-100R

CFR1-4W-100R

Resistance: 100 Ohms. Power: 0.25W. Resistor type: carbon layer. Breakdown voltage: 500V. Operating ...
CFR1-4W-100R
[LONGDESCRIPTION]
CFR1-4W-100R
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0195$ VAT incl.
(0.0195$ excl. VAT)
0.0195$

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