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Semiconductors Transistors

2N6491-PMC

2N6491-PMC
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.20$ 1.20$
5 - 9 1.14$ 1.14$
10 - 24 1.08$ 1.08$
25 - 39 1.02$ 1.02$
Quantity U.P
1 - 4 1.20$ 1.20$
5 - 9 1.14$ 1.14$
10 - 24 1.08$ 1.08$
25 - 39 1.02$ 1.02$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 39
Set of 1

2N6491-PMC. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 90V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488. Quantity in stock updated on 06/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 94
BD912-ST

BD912-ST

Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissip...
BD912-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
BD912-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 109
2N6491

2N6491

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gai...
2N6491
Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488
2N6491
Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$

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2N6491-PMC

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KBU8J

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2N5459

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IRFZ44V

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BLX98

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RFT-6-3A

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