Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.43$ | 1.43$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 24 | 1.28$ | 1.28$ |
25 - 49 | 1.21$ | 1.21$ |
50 - 99 | 1.18$ | 1.18$ |
100 - 125 | 1.07$ | 1.07$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.43$ | 1.43$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 24 | 1.28$ | 1.28$ |
25 - 49 | 1.21$ | 1.21$ |
50 - 99 | 1.18$ | 1.18$ |
100 - 125 | 1.07$ | 1.07$ |
2N6491. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488. Quantity in stock updated on 24/12/2024, 01:25.
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