Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 360A. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 104A. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2505S. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 104A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 54A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3700pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 190A. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3502. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3502S. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 3600pF. Cost): 870pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 94us. Type of transistor: MOSFET. Id(imp): 310A. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/emitter voltage VGE(th)max.: 2V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Function: Logic-Level Gate Drive, Fast Switching. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3705N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 89A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ 46A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Maximum dissipation Ptot [W]: 170W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 3600pF

C(in): 5890pF. Cost): 3130pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Id(imp): 1040A. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 100uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.003 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 16 ns. Technology: SMPS MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Function: very Low Rds. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Very low Rds-on on-resistance. ID (T=100°C): 170A. ID (T=25°C): 200A. Idss (max): 200A. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.003 Ohms. Technology: SMPS MOSFET. Voltage Vds(max): 30 v. Note: UltraLow Gate

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3713S. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 260A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 30A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 5890pF. Maximum dissipation Ptot [W]: 170W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 470A. ID (T=100°C): 98A. ID (T=25°C): 140A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.006 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. G-S Protection: no

Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 140A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ 71A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 140A. Power: 200W. On-resistance Rds On: 0.006 Ohms. Control: Logic-Level. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 30V

C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 470A. ID (T=100°C): 83A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.006 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 16V. Vgs(th) max.: 1V. Vgs(th) min.: 1V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3803S. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 140A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ 71A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Configuration: surface-mounted component (SMD). Number of terminals: 7. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 360A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0005 Ohms @ 100A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 67 ns. Switch-off delay tf[nsec.]: 222 ns. Ciss Gate Capacitance [pF]: 19680pF. Maximum dissipation Ptot [W]: 416W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 35A. ID (T=100°C): 7.1A. ID (T=25°C): 10A. Idss (max): 10A. Note: Logic-Level. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.18 Ohms. Technology: V-MOS TO220A. Voltage Vds(max): 100V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L520N. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 800pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 7.2 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. Spec info: Gate control by logic level. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL530NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 800 ns. Maximum dissipation Ptot [W]: 79W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L530NS. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 800 ns. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1800pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 60.4k Ohms. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL540N. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 36A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 140W. Housing (JEDEC standard): 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1800pF. Cost): 350pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 60.4k Ohms. ID (T=100°C): 26A. ID (T=25°C): 36A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Housing: D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no