Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.18$ | 1.18$ |
5 - 9 | 1.12$ | 1.12$ |
10 - 24 | 1.06$ | 1.06$ |
25 - 49 | 1.00$ | 1.00$ |
50 - 83 | 0.98$ | 0.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.18$ | 1.18$ |
5 - 9 | 1.12$ | 1.12$ |
10 - 24 | 1.06$ | 1.06$ |
25 - 49 | 1.00$ | 1.00$ |
50 - 83 | 0.98$ | 0.98$ |
IRLR120N. C(in): 440pF. Cost): 97pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 35A. ID (T=100°C): 7A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRLR120NTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.185 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 4 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. G-S Protection: no. Quantity in stock updated on 15/01/2025, 00:25.
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