Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.29$ | 0.29$ |
10 - 24 | 0.28$ | 0.28$ |
25 - 49 | 0.26$ | 0.26$ |
50 - 99 | 0.25$ | 0.25$ |
100 - 108 | 0.24$ | 0.24$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.29$ | 0.29$ |
10 - 24 | 0.28$ | 0.28$ |
25 - 49 | 0.26$ | 0.26$ |
50 - 99 | 0.25$ | 0.25$ |
100 - 108 | 0.24$ | 0.24$ |
BD135-16. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1.5A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 05:25.
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