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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 1.5A, 60V - BD167

NPN transistor, 1.5A, 60V - BD167
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.58$ 0.58$
10 - 24 0.55$ 0.55$
25 - 49 0.54$ 0.54$
50 - 99 0.52$ 0.52$
100 - 111 0.51$ 0.51$
Quantity U.P
1 - 9 0.58$ 0.58$
10 - 24 0.55$ 0.55$
25 - 49 0.54$ 0.54$
50 - 99 0.52$ 0.52$
100 - 111 0.51$ 0.51$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 111
Set of 1

NPN transistor, 1.5A, 60V - BD167. NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Original product from manufacturer Div. Quantity in stock updated on 25/07/2025, 15:25.

Equivalent products :

Quantity in stock : 16
MJE721

MJE721

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: n...
MJE721
NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN
MJE721
NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 107
BD237

BD237

NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO...
BD237
NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) BD238. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25
BD237
NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) BD238. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$

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BD238

BD238

NPN-Transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO...
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BD246C-PMC

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BD245C-PMC

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IRF1404

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BD135

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1N5408

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IRF3205

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BD139

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NPN transistor, PCB soldering, TO-126, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector curr...
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