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Semiconductors Transistors

2SC1962

2SC1962
Quantity excl. VAT VAT incl.
1 - 4 2.11$ 2.11$
5 - 5 2.00$ 2.00$
Quantity U.P
1 - 4 2.11$ 2.11$
5 - 5 2.00$ 2.00$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 5
Set of 1

2SC1962. Semiconductor material: silicon. FT: 45 MHz. Collector current: 0.5A. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.

Equivalent products :

Out of stock
BF460

BF460

Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dis...
BF460
Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 250V. Quantity per case: 1
BF460
Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 250V. Quantity per case: 1
Set of 1
3.87$ VAT incl.
(3.87$ excl. VAT)
3.87$
Quantity in stock : 881
MJE340

MJE340

RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration:...
MJE340
RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32)
MJE340
RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 129
MJE340-ST

MJE340-ST

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max ...
MJE340-ST
Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no
MJE340-ST
Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Out of stock
BF461

BF461

Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dis...
BF461
Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1
BF461
Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1
Set of 1
5.15$ VAT incl.
(5.15$ excl. VAT)
5.15$

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