NPN transistor, 1A, TO-126B-A1, 35V, TO-126 (TO-225, SOT-32) - 2SC1846

NPN transistor, 1A, TO-126B-A1, 35V, TO-126 (TO-225, SOT-32) - 2SC1846. NPN transistor, 1A, TO-126B-A1, 35V, TO-126 (TO-225, SOT-32). Collector current: 1A. Housing (according to data sheet): TO-126B-A1. Collector/emitter voltage Vceo: 35V. Housing: TO-126 (TO-225, SOT-32). Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 340. Minimum hFE gain: 85. Ic(pulse): 1.5A. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Type of transistor: NPN. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. BE diode: no. CE diode: no. Quantity in stock updated on 11/04/2025, 16:25.