Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.42$ | 0.42$ |
5 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 149 | 0.31$ | 0.31$ |
150 - 1542 | 0.29$ | 0.29$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.42$ | 0.42$ |
5 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 149 | 0.31$ | 0.31$ |
150 - 1542 | 0.29$ | 0.29$ |
MMBT5551. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 0.6A. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 00:25.
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