MMSS8050-H

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 1	1.67$	1.67$
2 - 2	1.59$	1.59$
3 - 4	1.51$	1.51$
5 - 9	1.42$	1.42$
10 - 24	1.34$	1.34$
25 - 49	1.10$	1.10$
50 - 240	1.03$	1.03$

Quantity (Set of 10)	U.P
1 - 1	1.67$	1.67$
2 - 2	1.59$	1.59$
3 - 4	1.51$	1.51$
5 - 9	1.42$	1.42$
10 - 24	1.34$	1.34$
25 - 49	1.10$	1.10$
50 - 240	1.03$	1.03$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2397

Set of 10

MMSS8050-H. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 350. Minimum hFE gain: 200. Collector current: 1.5A. Marking on the case: Y1. Pd (Power Dissipation, Max): 0.3W. Technology: 'Epitaxial Silicon Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 22:25.

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Delivery in 2-3 days, with postal tracking!